K4M56163PG Datasheet, PDF (5/12 Pages) Samsung semiconductor – 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4M56163PG - R(B)E/G/C/F
Mobile SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25°C ~ 85°C for Extended, -25°C ~ 70°C for Commercial)
Parameter
Symbol
Test Condition
Version
-75 -90 -1L
Unit Note
Operating Current
(One Bank Active)
Burst length = 1
ICC1 tRC ≥ tRC(min)
IO = 0 mA
50
45
45 mA 1
Precharge Standby Current in ^{ICC2P CKE ≤ VIL(max), tCC = 10ns}
power-down mode
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
0.3
mA
0.3
Precharge Standby Current
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
10
in non power-down mode
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
1
mA
Active Standby Current
in power-down mode
ICC3P CKE ≤ VIL(max), tCC = 10ns
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
5
mA
2
Active Standby Current
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
25
mA
in non power-down mode
(One Bank Active)
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
15
mA
Operating Current
(Burst Mode)
ICC4
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
75
65
65 mA 1
Refresh Current
Self Refresh Current
ICC5 tARFC ≥ tARFC(min)
ICC6 CKE ≤ 0.2V
85
85
85 mA 2
Internal TCSR
Full
45 ^*4
200
85/70
°C
3
450
-E/C 1/2
160
300
5
1/4
140
Full
150
250
uA
300
-G/F 1/2
135
250
6
1/4
130
225
Deep Power Down Current
ICC8 CKE ≤ 0.2V
10
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported.
In comercial Temp : 45×C/Max 70×C. In extended Temp : 45×C/Max 85×C.
4. It has +/-5 ×C tolerance.
5. K4M56163PG-R(B)E/C**
6. K4M56163PG-R(B)G/F**
7. DPD(Deep Power Down) function is an optional feature, and it will be enabled upon request.
Please contact Samsung for more information.
8. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
uA 7
February 2006