K4M511533E Datasheet, PDF (5/12 Pages) Samsung semiconductor – Mobile-SDRAM

K4M511533E - Y(P)C/L/F
Mobile-SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 70°C)
Parameter
Symbol
Test Condition
Operating Current
(One Bank Active)
Burst length = 1
ICC1 tRC ≥ tRC(min)
IO = 0 mA
Precharge Standby Current in ^{ICC2P CKE ≤ VIL(max), tCC = 10ns}
power-down mode
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
Precharge Standby Current
in non power-down mode
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
ICC3P CKE ≤ VIL(max), tCC = 10ns
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
Operating Current
(Burst Mode)
ICC4
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
Refresh Current
ICC5 tRC ≥ tRC(min)
-C
-L
Self Refresh Current
ICC6 CKE ≤ 0.2V
Internal TCSR
Full Array
-F
1/2 of Full Array
1/4 of Full Array
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported(In commercial Temp : Max 40°C/Max 70°C).
4. K4M511533E-Y(P)C**
5. K4M511533E-Y(P)L**
6. K4M511533E-Y(P)F**
7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Version
-75 -1H -1L
100 90
85
1.5
1.5
20
10
8
8
45
35
145 125 115
190 170 160
1800
1500
Max 40
Max 70
850
1300
600
900
500
700
Unit Note
mA 1
mA
mA
mA
mA
mA
mA 1
mA 2
4
uA
5
°C 3
uA 6
February 2004