K4M28323PH-F Datasheet, PDF (5/12 Pages) Samsung semiconductor – 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4M28323PH - F(H)E/G/C/F
Mobile SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25°C ~ 85°C for Extended, -25°C ~ 70°C for Commercial)
Parameter
Symbol
Test Condition
Version
-75 -90 -1L
Unit Note
Operating Current
(One Bank Active)
Burst length = 1
ICC1 tRC ≥ tRC(min)
IO = 0 mA
45
40
40 mA 1
Precharge Standby Current in ^{ICC2P CKE ≤ VIL(max), tCC = 10ns}
power-down mode
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
0.3
mA
0.3
Precharge Standby Current
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
10
in non power-down mode
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
1
mA
Active Standby Current
in power-down mode
ICC3P CKE ≤ VIL(max), tCC = 10ns
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
5
mA
2
Active Standby Current
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
20
mA
in non power-down mode
(One Bank Active)
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
10
mA
Operating Current
(Burst Mode)
ICC4
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
60
50
50 mA 1
Refresh Current
Self Refresh Current
ICC5 tARFC ≥ tARFC(min)
ICC6 CKE ≤ 0.2V
Internal TCSR
Full Array
-E/C
1/2 of Full
1/4 of Full
Full Array
-G/F
1/2 of Full
100 95
95 mA 2
45 ^*4
150
85/70
°C
3
250
140
210
5
135
190
uA
100
200
90
160
6
Deep Power Down Current
ICC8 CKE ≤ 0.2V
1/4 of Full
85
140
10
uA 7
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported.
In comercial Temp : 45°C/Max 70°C. In extended Temp : 45°C/Max 85°C.
4. It has +/-5 °C tolerance.
5. K4M28323PH-S(D)E/C**
6. K4M28323PH-S(D)G/F**
7.DPD(Deep Power Down) function is an optional feature and it will be enabled upon request.
Please contact Samsung for more information.
7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
5
October 2005