K4M28323LH Datasheet, PDF (5/12 Pages) Samsung semiconductor – 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4M28323LH - F(H)N/G/L/F
Mobile SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 85°C for Extended, -25 to 70°C for Commercial)
Parameter
Symbol
Test Condition
Version
-60 -75 -7L
Unit Note
Operating Current
(One Bank Active)
Burst length = 1
ICC1 tRC ≥ tRC(min)
IO = 0 mA
80
65
65 mA 1
Precharge Standby Current in ^{ICC2P CKE ≤ VIL(max), tCC = 10ns}
power-down mode
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
0.5
mA
0.5
Precharge Standby Current
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
12
in non power-down mode
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
5
mA
Active Standby Current
in power-down mode
ICC3P CKE ≤ VIL(max), tCC = 10ns
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
5
mA
2
Active Standby Current
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
25
mA
in non power-down mode
(One Bank Active)
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
15
mA
Operating Current
(Burst Mode)
ICC4
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
100 75
65 mA 1
Refresh Current
Self Refresh Current
ICC5 tRC ≥ tRC(min)
ICC6 CKE ≤ 0.2V
140 130 120 mA 2
-N/L
330
uA
-G/F
Internal TCSR
Full Array
1/2 of Full Array
45 ^*4
200
150
85/70
330
230
°C 3
uA
1/4 of Full Array
130
190
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported.
In comercial Temp : 45°C/Max 70°C. In extended Temp : 45°C/Max 85°C.
4. It has +/-5 °C tolerance.
5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
5
January 2006