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K4M28163PF Datasheet, PDF (5/12 Pages) Samsung semiconductor – 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |||
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K4M28163PF - R(B)G/F
Mobile-SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 85°C for Extended, -25 to 70°C for Commercial)
Parameter
Symbol
Test Condition
Version
-75 -90 -1L
Unit Note
Operating Current
(One Bank Active)
Burst length = 1
ICC1 tRC ⥠tRC(min)
IO = 0 mA
40
35
35 mA 1
Precharge Standby Current in ICC2P CKE ⤠VIL(max), tCC = 10ns
power-down mode
ICC2PS CKE & CLK ⤠VIL(max), tCC = â
0.3
mA
0.3
Precharge Standby Current
ICC2N
CKE ⥠VIH(min), CS ⥠VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
10
in non power-down mode
ICC2NS
CKE ⥠VIH(min), CLK ⤠VIL(max), tCC = â
Input signals are stable
1
mA
Active Standby Current
in power-down mode
ICC3P CKE ⤠VIL(max), tCC = 10ns
ICC3PS CKE & CLK ⤠VIL(max), tCC = â
5
mA
1
Active Standby Current
ICC3N
CKE ⥠VIH(min), CS ⥠VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
20
mA
in non power-down mode
(One Bank Active)
ICC3NS
CKE ⥠VIH(min), CLK ⤠VIL(max), tCC = â
Input signals are stable
1
mA
Operating Current
(Burst Mode)
ICC4
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
60
50
50 mA 1
Refresh Current
ICC5 tARFC ⥠tARFC(min)
90
85
85 mA 2
Internal TCSR Max 40 Max 85/70 °C
Self Refresh Current
ICC6 CKE ⤠0.2V
Full Array
100
1/2 of Full Array
90
250
210
uA
1/4 of Full Array
85
190
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
February 2004
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