K1S1616BCA Datasheet, PDF (5/10 Pages) Samsung semiconductor – 1Mx16 bit Page Mode Uni-Transistor Random Access Memory

K1S1616BCA
Preliminary
UtRAM
PRODUCT LIST
Part Name
K1S1616BCA-FI70
K1S1616BCA-FI85
K1S1616BCA-BI70¹⁾
K1S1616BCA-BI85¹⁾
1. Lead Free Product
Industrial Temperature Product(-40~85°C)
Function
48-FBGA-6.00x7.00, 70ns
48-FBGA-6.00x7.00, 85ns
48-FBGA-6.00x7.00, 70ns
48-FBGA-6.00x7.00, 85ns
RECOMMENDED DC OPERATING CONDITIONS¹⁾
Item
Supply voltage
Ground
Input high voltage
Input low voltage
1. TA=-40 to 85°C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width ≤20ns.
3. Undershoot: -1.0V in case of pulse width ≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE¹⁾(f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
CIN
CIO
Symbol
Vcc
Vss
VIH
VIL
Min
1.7
0
1.4
-0.2³⁾
Test Condition
VIN=0V
VIO=0V
Typ
1.8/2.0
0
-
-
Max
2.1
0
Vcc+0.3²⁾
0.4
Unit
V
V
V
V
Min
Max
Unit
-
8
pF
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min Typ¹⁾ Max Unit
Input leakage current
ILI VIN=Vss to Vcc
-1
-
1
µA
Output leakage current
ILO CS=VIH, ZZ=VIH, OE=VIH or WE=VIL, VIO=Vss to Vcc
-1
-
1
µA
ICC1 ^{Cycle time=1µs, 100% duty, IIO=0mA, CS≤0.2V,}
-
Average operating current
ZZ≥Vcc-0.2V, VIN≤0.2V or VIN≥VCC-0.2V
ICC2 ^{Cycle time=tRC+3tPC, IIO=0mA, 100% duty, CS=VIL, ZZ=VIH,}
-
VIN=VIL or VIH
-
5 mA
30 mA
Output low voltage
VOL IOL=0.1mA
-
-
0.2 V
Output high voltage
VOH IOH=-0.1mA
Standby Current(CMOS) ISB1²⁾ CS≥Vcc-0.2V, ZZ≥Vcc-0.2V, Other inputs=Vss to Vcc
1. Typical values are tested at VCC=1.8V, TA=25°C and not guaranteed.
1.4
-
-
V
-
-
80 µA
-5-
Revision 0.0
December 2003