K1S16161CA Datasheet, PDF (5/10 Pages) Samsung semiconductor – 1Mx16 bit Page Mode Uni-Transistor Random Access Memory

K1S16161CA
Preliminary
UtRAM
PRODUCT LIST
Part Name
K1S16161CA-FI70
K1S16161CA-BI70¹⁾
1. Lead Free Product
Industrial Temperature Product(-40~85°C)
Function
48-FBGA, 70ns, 2.9V
48-FBGA, 70ns, 2.9V
RECOMMENDED DC OPERATING CONDITIONS¹⁾
Item
Supply voltage
Ground
Input high voltage
Input low voltage
1. TA=-40 to 85°C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width ≤20ns.
3. Undershoot: -1.0V in case of pulse width ≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Symbol
Vcc
Vss
VIH
VIL
Min
2.7
0
2.2
-0.2³⁾
Typ
Max
Unit
2.9
3.1
V
0
0
V
-
Vcc+0.3²⁾
V
-
0.6
V
CAPACITANCE¹⁾(f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min
Max
Unit
-
8
pF
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min Typ¹⁾ Max Unit
Input leakage current
ILI VIN=Vss to Vcc
-1
-
1
µA
Output leakage current
ILO CS=VIH, ZZ=VIH, OE=VIH or WE=VIL, VIO=Vss to Vcc
-1
-
1
µA
ICC1 ^{Cycle time=1µs, 100% duty, IIO=0mA, CS≤0.2V,}
-
Average operating current
ZZ≥Vcc-0.2V, VIN≤0.2V or VIN≥VCC-0.2V
ICC2 ^{Cycle time=tRC+3tPC, IIO=0mA, 100% duty, CS=VIL, ZZ=VIH,}
-
VIN=VIL or VIH
-
7 mA
35 mA
Output low voltage
VOL IOL=2.1mA
-
-
0.4 V
Output high voltage
Standby Current(CMOS)
VOH IOH=-1.0mA
ISB1²⁾ CS≥Vcc-0.2V, ZZ≥Vcc-0.2V, Other inputs=Vss to Vcc
2.4
-
-
V
-
-
80 µA
1. Typical values are tested at VCC=2.9V, TA=25°C and not guaranteed.
-5-
Revision 0.0
December 2003