KFW4G16Q2M Datasheet, PDF (47/125 Pages) Samsung semiconductor – FLASH MEMORY(66MHz)

OneNAND4G(KFW4G16Q2M-DEB6)
OneNAND2G(KFH2G16Q2M-DEB6)
OneNAND1G(KFG1G16Q2M-DEB6)
2.8.11 Start Address3 Register F102h (R/W)
FLASH MEMORY
This Read/Write register describes the NAND Flash destination block address which will be copy back programmed.
F102h, default = 0000h
15
14
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9
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4
3
2
1
0
Reserved(000000)
FCBA
Device
1Gb
Start Address3 Information
Register Information
FCBA
Number of Block
1024
FBA
FCBA[9:0]
Description
NAND Flash Copy Back Block Address
2.8.12 Start Address4 Register F103h (R/W)
This Read/Write register describes the NAND Flash destination page address in a block and the NAND Flash destination sector
address in a page for copy back programming.
F103h, default = 0000h
15
14
13
12
11
10
9
8
7
6
5
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3
2
1
0
Reserved(00000000)
FCPA
FCSA
Start Address4 Information
Item
FCPA
FCSA
Description
NAND Flash Copy Back Page
Address
NAND Flash Copy Back Sector
Address
Default Value
000000
00
Range
000000 ~ 111111,
6 bits for 64 pages
00 ~ 11,
2 bits for 4 sectors
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