KFG1216Q2A Datasheet, PDF (42/114 Pages) Samsung semiconductor – FLASH MEMORY

OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
Burst Length (BL)
BL
000
001
010
011
100
101~111
Burst Length(Main)
Burst Length(Spare)
Continuous(default)
4 words
8 words
16 words
32 words
N/A
Reserved
Burst Length (BL) Information[11:9]
Item
BL
Definition
Burst Length
Description
Specifies the size of the burst length during a synchronous
read, wrap around and linear burst read
Error Correction Code (ECC) Information[8]
Item
ECC
RDY Polarity (RDYpol) Information[7]
Definition
Error Correction Code Operation
Description
0 = with correction (default)
1 = without correction (bypassed)
Item
RDYpol
Definition
RDY signal polarity
Description
1 = high for ready (default)
0 = low for ready
INT Polarity (INTpol) Information[6]
INTpol
0
1 (default)
INT bit of Interrupt Status Register
0 (busy)
1 (ready)
0 (busy)
1 (ready)
INT Pin output
High
Low
Low
High
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