KA8507B Datasheet, PDF (4/7 Pages) Samsung semiconductor – COMPANDER

KA8507B
COMPANDER
ELECTRICAL CHARACTERISTICS
(V_CC = 3V, f = 1kHz, Ta = 25°C, unless otherwise noted)
Characteristic
Symbol
DC ELECTRICAL CHARACTERISTICS
Operating Voltage
V_CC
Operating Current
I_CC
COMPRESSOR PART
Standard Input Voltage ( 0dB ) V_{I (COMP)}
Gain Defference
∆G_{V1 (COMP)}
∆G_{V2 (COMP)}
Bypath Gain Difference
∆G_{VB (COMP)}
Output Distortion
THD _COMP
Noise Output Voltage
V_{NO (COMP)}
Mute Attenuation Ratio
ATT _MUTE
Limiting Voltage
V_{LIM (COMP)}
EXPANDER PART
Standard Output Level ( 0dB )
Gain Difference
Bypath Gain Difference
Output Distortion
Noise Output Voltage
Mute Attenuation Ratio
Max. Output Voltage
V_{O (EXP)}
∆G_{V1 (EXP)}
∆G_{V2 (EXP)}
∆G_{V3 (EXP)}
∆G_{VB (EXP)}
THD _EXP
V_{NO (EXP)}
ATT _MUTE
V_{OEXP (MAX)}
Test Condition
−
No Signal
V_CC = 300mVrms = 0dB
Vin = −20dB
Vin = −40dB
Vin = 0dB, BYPATH = GND
Vin = 0dB
Rg = 620ohm
Vin = 0dB, CMUTE = GND
−
Vin = 30mVrms = 0dB
Vin = −10dB
Vin = −20dB
Vin = −30dB
Vin = 0dB, BYPATH = GND
Vin = 0dB
Rg = 620ohm
Vin = 0dB, EMUTE = GND
THD = 10%
Min. Typ. Max.
− 2.4 7.0
− 4.0 6.5
8.0
−0.5
−1.0
−1.5
−
−
60
1.15
12.5
0
0
0
0.5
3.0
80
1.35
17.0
+0.5
+1.0
+1.5
1.0
5.5
−
1.50
110
−0.5
−1.0
−1.5
−2.5
−
−
60
700
130
0
0
0
0
0.5
10.0
80
800
160
+0.5
+1.0
+2.0
+0.5
1.5
30.0
−
−
Unit
V
mA
mVrms
dB
dB
%
mVrms
dB
Vp-p
mVrms
dB
dB
%
µVrms
dB
mVrms
4