K9F6408U0B-TCB0 Datasheet, PDF (4/27 Pages) Samsung semiconductor – 8M x 8 Bit NAND Flash Memory

K9F6408U0B-TCB0, K9F6408U0B-TIB0
FLASH MEMORY
PRODUCT INTRODUCTION
The K9F6408U0B is a 66Mbit(69,206,016 bit) memory organized as 16,384 rows(pages) by 528 columns. Spare sixteen columns are
located from column address of 512 to 527. A 528-byte data register is connected to memory cell arrays accommodating data transfer
between the I/O buffers and memory during page read and page program operations. The memory array is made up of 16 cells that
are serially connected to form a NAND structure. Each of the 16 cells resides in a different page. A block consists of the 16 pages
formed by one NAND structures, totaling 4,224 NAND structures of 16 cells. The array organization is shown in Figure 2. The pro-
gram and read operations are executed on a page basis, while the erase operation is executed on a block basis. The memory array
consists of 1024 separately erasable 8K-byte blocks. It indicates that the bit by bit erase operation is prohibited on the K9F6408U0B.
The K9F6408U0B has addresses multiplexed into 8 I/O′s. This scheme dramatically reduces pin counts and allows systems
upgrades to future densities by maintaining consistency in system board design. Command, address and data are all written through
I/O′s by bringing WE to low while CE is low. Data is latched on the rising edge of WE. Command Latch Enable(CLE) and Address
Latch Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. All commands require one bus cycle
except for Block Erase command which requires two cycles: one cycle for erase-setup and another for erase-execution after block
address loading. The 8M byte physical space requires 23 addresses, thereby requiring three cycles for byte-level addressing: column
address, low row address and high row address, in that order. Page Read and Page Program need the same three address cycles
following the required command input. In Block Erase operation, however, only the two row address cycles are used.
Device operations are selected by writing specific commands into the command register. Table 1 defines the specific commands of
the K9F6408U0B.
Table 1. COMMAND SETS
Function
1st. Cycle
2nd. Cycle
Acceptable Command during Busy
Read 1
00h/01h⁽¹⁾
-
Read 2
50h⁽²⁾
-
Read ID
90h
-
Reset
FFh
-
O
Page Program
80h
10h
Block Erase
60h
D0h
Read Status
70h
-
O
NOTE : 1. The 00h command defines starting address of the 1st half of registers.
The 01h command defines starting address of the 2nd half of registers.
After data access on the 2nd half of register by the 01h command, the status pointer is
automatically moved to the 1st half register(00h) on the next cycle.
2. The 50h command is valid only when the GND input(pin #40) is low level.
Caution : Any undefined command inputs are prohibited except for above command set of Table 1.
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