K8D6X16UTM Datasheet, PDF (4/48 Pages) Samsung semiconductor – 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory

K8D6x16UTM / K8D6x16UBM
FLASH MEMORY
ORDERING INFORMATION
K 8 D 6x 1 6 U T M - T I 0 7
Samsung
NOR Flash Memory
Device Type
Dual Bank Boot Block
Bank Division
63 = 16Mbits + 48Mbits
Organization
x8/x16 Selectable
Access Time
07 = 70 ns
08 = 80 ns
09 = 90 ns
Operating Temperature Range
C = Commercial Temp. (0 °C to 70 °C)
I = Industrial Temp. (-40 °C to 85 °C)
Package
P = 48TSOP1(Lead-Free) Y = 48 TSOP1
D : FBGA(Lead Free) F : FBGA
L : TBGA(Lead Free) T : TBGA
Version
M = 1st Generation
Operating Voltage Range
2.7V to 3.6V
Block Architecture
T = Top Boot Block
B = Bottom Boot Block
Table 1. PRODUCT LINE-UP
Part No.
Vcc
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
-7
70ns
70ns
25ns
-8
2.7V~3.6V
80ns
80ns
25ns
-9
90ns
90ns
35ns
Table 2. K8D6316U DEVICE BANK DIVISIONS
Device
Part Number
K8D6316U
Mbit
16 Mbit
Bank 1
Block Sizes
Eight 8 Kbyte/4 Kword,
thirty-one 64 Kbyte/32 Kword
Mbit
48 Mbit
Bank 2
Block Sizes
Ninety-six
64 Kbyte/32 Kword
4
Revision 1.5
March 2005