K8D1716UTB Datasheet, PDF (4/40 Pages) Samsung semiconductor – 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory

K8D1716UTB / K8D1716UBB
FLASH MEMORY
ORDERING INFORMATION
K 8 D 17 1 6 U T B - T I 0 7
Samsung
NOR Flash Memory
Device Type
Dual Bank Boot Block
Access Time
07 = 70 ns
08 = 80 ns
09 = 90 ns
Operating Temperature Range
C = Commercial Temp. (0 °C to 70 °C)
I = Industrial Temp. (-40 °C to 85 °C)
Bank Division
17 = 8Mbits + 8Mbits
Organization
x16
Package
Y = 48 TSOP1
Version
B = 3rd Generation
Operating Voltage Range
2.7V to 3.6V
Block Architecture
T = Top Boot Block
B = Bottom Boot Block
Table 1. PRODUCT LINE-UP
Part No.
Vcc
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
-7
70ns
70ns
25ns
-8
2.7V~3.6V
80ns
80ns
25ns
-9
90ns
90ns
35ns
Table 2. K8D1716U DEVICE BANK DIVISIONS
Device
Part Number
K8D1716U
Mbit
8 Mbit
Bank 1
Block Sizes
Eight 8 Kbyte/4 Kword,
fifteen 64 Kbyte/32 Kword
Mbit
8 Mbit
Bank 2
Block Sizes
Sixteen
64 Kbyte/32 Kword
4
Revision 0.0
July 2004