K4F660811B Datasheet, PDF (4/20 Pages) Samsung semiconductor – 8M x 8bit CMOS Dynamic RAM with Fast Page Mode

K4F660811B,K4F640811B
DC AND OPERATING CHARACTERISTICS (Continued)
Symbol
Power
Speed
K4F660811B
Max
-45
100
ICC1
Don′t care
-50
90
-60
80
ICC2
Normal
Don′t care
2
-45
100
ICC3
Don′t care
-50
90
-60
80
-45
70
ICC4
Don′t care
-50
60
-60
50
ICC5
Normal
Don′t care
1
-45
100
ICC6
Don′t care
-50
90
-60
80
ICC1* : Operating Current (RAS and CAS, Address cycling @tRC=min.)
ICC2 : Standby Current (RAS=CAS=W=VIH)
ICC3* : RAS-only Refresh Current (CAS=VIH, RAS, Address cycling @tRC=min.)
ICC4* : Fast Page Mode Current (RAS=VIL, CAS, Address cycling @tPC=min.)
ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min)
CMOS DRAM
K4F640811B
130
120
110
2
130
120
110
80
70
60
1
130
120
110
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
*Note : _{ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.}
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one fast page mode cycle time, tPC.