K4F660412D Datasheet, PDF (4/20 Pages) Samsung semiconductor – 16M x 4bit CMOS Dynamic RAM with Fast Page Mode

K4F660412D,K4F640412D
CMOS DRAM
DC AND OPERATING CHARACTERISTICS (Continued)
Symbol
Power
ICC1
Don′t care
Speed
-45
-50
-60
K4F660412D
90
80
70
Max
ICC2
Normal
L
Don′t care
1
1
-45
90
ICC3
Don′t care
-50
80
-60
70
-45
70
ICC4
Don′t care
-50
60
-60
50
ICC5
Normal
L
Don′t care
0.5
200
-45
120
ICC6
Don′t care
-50
110
-60
100
ICC7
L
Don′t care
350
ICCS
L
Don′t care
350
K4F640412D
120
110
100
1
1
120
110
100
70
60
50
0.5
200
120
110
100
350
350
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
mA
mA
mA
uA
uA
ICC1* : Operating Current (RAS and CAS, Address cycling @tRC=min.)
ICC2 : Standby Current (RAS=CAS=W=VIH)
ICC3* : RAS-only Refresh Current (CAS=VIH, RAS, Address cycling @tRC=min.)
ICC4* : Fast Page Mode Current (RAS=VIL, CAS, Address cycling @tPC=min.)
ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, CAS=CAS-before-RAS cycling or 0.2V,
W, OE=VIH, Address=Don′t care, DQ=Open, TRC=31.25us
ICCS : Self Refresh Current
RAS=CAS=0.2V, W=OE=A0 ~ A12(A11)=VCC-0.2V or 0.2V, DQ0 ~ DQ3=VCC-0.2V, 0.2V or Open
*Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one fast page mode cycle time, tPC.