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DS_S1T8515A01 Datasheet, PDF (4/6 Pages) Samsung semiconductor – FM IF RECEIVER FOR FLEX PAGER
S1T8515A
FM IF RECEIVER FOR FLEX PAGER
ABSOLUTE MAXIMUM RATINGS
Characteristic
Supply Voltage
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
VCC (MAX)
PD
TOPR
TSTG
Value
4
760
−20 — +70
−55 — +125
Unit
V
mW
°C
°C
ELECTRICAL CHARACTERISTICS
(VCC = 1.4V ±5%, fIN (2MIX) = 21.4MHz, fDEV = ±4.8kHz, fMOD = 800Hz, Ta = 25°C, FIL_VAR = “H”, unless
otherwise specified)
Characteristic
Symbol
Test Conditions
Operating current
Alarm detection voltage
Alarm low level output voltage
Alarm high level leakage current
FSK low level output voltage
FSK high level leakage current
Regulator output voltage
Quick charge current
Input for −3dB sensitivity
Recovered audio output voltage
Mixer conversion gain
Signal to noise ratio
Total Harmonic Distortion
Mixer 3rd order intercept point
ICCN
ICCS
VAD
VO (AL)
ILKG (AL)
VL (FSK)
ILKG (FSK)
VOREG
IC
VLIM
VO (RAO)
∆GV (M)
S/N
THD
3RD
No Input Signal
Battery Saving
−
I = 100µA
−
I = 100µA
−
−
−
Mixer Input
VIN (2MIX) = 500µVrms
Ceramic Filter loss = −1dB
VIN (MIX1N) = 500µVrms
VIN (MIX1N) = 500µVrms
−
Mixer input resistance
Limiting amp input resistance
AM rejection ratio
RI (MIX)
RI (LA)
AMR
−
−
VIN (2MIX) = 500µVrms
(AM = 300%)
Data shaping output duty
RSSI output voltage
RSSI output resistance
DR
VRSSI
RRSSI
VIN (2MIX) = 500µVrms
VIN (2MIX) = 1mVrms
−
Min.
−
−
1.0
−
−
−
−
0.95
50
−
36
8
38
−
−
3.5
0.9
25
Typ.
1.5
0
1.05
−
−
−
−
1.0
70
2.5
54
12
55
2.0
−10
5
1.5
40
Max.
1.75
10
1.1
0.4
2
0.4
2
1.05
−
7.5
78
16
−
3.5
−
6.5
2.1
−
Unit
mA
µA
V
V
µA
V
µA
V
µA
µVrms
mVrms
dB
dB
%
dBm
kΩ
kΩ
dB
40
50
60
%
0.49
0.7
0.91
V
90
100 110
kΩ
4