K8D1716UTC Datasheet, PDF (36/41 Pages) Samsung semiconductor – 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory

K8D1716UTC / K8D1716UBC
SWITCHING WAVEFORMS
Data Polling During Internal Routine Operation
FLASH MEMORY
CE
tOE
tDF
OE
tOEH2
WE
tCE
tOH
DQ7 ^{Data In}
DQ0-DQ6 _{Data In}
tPGM or tBERS
DQ7
Status Data
*DQ7 = Valid Data
Valid Data
Note : *DQ7=Vaild Data (The device has completed the internal operation).
HIGH-Z
HIGH-Z
RY/BY Timing Diagram During Program/Erase Operation
CE
WE
RY/BY
The rising edge of the last WE signal
Entire progrming
or erase operation
tBUSY
Parameter
Program/Erase Valid to RY/BY Delay
Chip Enable Access Time
Output Enable Time
CE & OE Disable Time
Output Hold Time from Address, CE or OE
OE Hold Time
Symbol
tBUSY
tCE
tOE
tDF
tOH
tOEH2
-7
Min Max
90
-
-
70
-
25
-
16
0
-
10
-
-8
Min Max
90
-
-
80
-
25
-
16
0
-
10
-
-9
Unit
Min Max
90
-
ns
-
90
ns
-
35
ns
-
16
ns
0
-
ns
10
-
ns
36
Revision 1.0
December 2004