M393B1K73EB0 Datasheet, PDF (34/45 Pages) Samsung semiconductor – 240pin Registered DIMM based on 2Gb E-die

Registered DIMM
datasheet
Rev. 1.0
DDR3L SDRAM
[ Table 18 ] DDR3-1066 Speed Bins
Speed
CL-nRCD-nRP
Parameter
Internal read command to first data
ACT to internal read or write delay time
PRE command period
ACT to ACT or REF command period
ACT to PRE command period
CL = 6
CWL = 5
CWL = 6
CL = 7
CWL = 5
CWL = 6
CL = 8
CWL = 5
CWL = 6
Supported CL Settings
Supported CWL Settings
Symbol
tAA
tRCD
tRP
tRC
tRAS
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
min
13.125
13.125
13.125
50.625
37.5
2.5
1.875
1.875
DDR3-1066
7-7-7
Reserved
Reserved
Reserved
6,7,8
5,6
max
20
-
-
-
9*tREFI
3.3
<2.5
<2.5
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
nCK
nCK
NOTE
1,2,3,5
1,2,3,4
4
1,2,3,4,8
4
1,2,3
[ Table 19 ] DDR3-1333 Speed Bins
Speed
CL-nRCD-nRP
Parameter
Internal read command to first data
ACT to internal read or write delay time
PRE command period
ACT to ACT or REF command period
ACT to PRE command period
CWL = 5
CL = 6
CWL = 6
CWL = 7
CWL = 5
CL = 7
CWL = 6
CWL = 7
CWL = 5
CL = 8
CWL = 6
CWL = 7
CL = 9
CWL = 5,6
CWL = 7
CL = 10
CWL = 5,6
CWL = 7
Supported CL Settings
Supported CWL Settings
Symbol
tAA
tRCD
tRP
tRC
tRAS
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
DDR3-1333
9 -9 - 9
min
13.5 (13.125)⁸
13.5 (13.125)⁸
13.5 (13.125)⁸
49.5 (49.125)⁸
36
2.5
Reserved
Reserved
Reserved
1.875
Reserved
Reserved
1.875
Reserved
Reserved
1.5
Reserved
1.5
6,7,8,9,10
5,6,7
max
20
-
-
-
9*tREFI
3.3
<2.5
<2.5
<1.875
<1.875
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
nCK
nCK
NOTE
1,2,3,6
1,2,3,4,6
4
4
1,2,3,4,6
1,2,3,4
4
1,2,3,6
1,2,3,4
4
1,2,3,4,8
4
1,2,3
- 34 -