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KM416C254D Datasheet, PDF (34/36 Pages) Samsung semiconductor – 256K x 16Bit CMOS Dynamic RAM with Extended Data Out
KM416C254D, KM416V254D
CMOS DRAM
CAS-BEFORE-RAS REFRESH COUNTER TEST CYCLE
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
tCSR
tCSR
tCHR
tCHR
VIH -
A
VIL -
READ CYCLE
VIH -
W
VIL -
tWRP tWRH
tRAS
tCPT
tRSH
tCAS
tCPT
tRSH
tCAS
tASC
tRAL
tCAH
COLUMN
ADDRESS
tRCS
tAA
tCAC
tRP
tRRH
tRCH
VIH -
OE
VIL -
VOH -
DQ0 ~ DQ15
VOL -
WRITE CYCLE
VIH -
W
VIL -
VIH -
OE
VIL -
tWRP tWRH
VIH -
DQ0 ~ DQ15
VIL -
READ-MODIFY-WRITE
tWRP
VIH -
W
VIL -
tWRH
VIH -
OE
VIL -
VI/OH -
DQ0 ~ DQ15
VI/OL -
tCLZ
tOEA
tWCS
tRWL
tCWL
tWCH
tWP
tOEZ
DATA-OUT
tWEZ
tREZ
tCEZ
tDS
tDH
DATA-IN
tRCS
tAWD
tCWD
tCAC
tAA
tOEA
tCWL
tRWL
tWP
tCLZ
tOED
tDH
tOEZ tDS
VALID
DATA-OUT
VALID
DATA-IN
Don′t care
Undefined