S3C821A Datasheet, PDF (32/33 Pages) Samsung semiconductor – S3C8-SERIES MICROCONTROLLES

S3P821A OTP
S3C821A/P821A
Table 20-4. D.C. Electrical Characteristics (Continued)
(T_A = – 40 ^°C to + 85 ^°C, V_DD = 2.0 V to 5.5 V)
Parameter Symbol
Conditions
V_LC2 output
voltage
V_LC3 output
voltage
V_LC2
V_LC3
V_DD = 2.7 V to 5.5 V
LCD clock = 0 Hz
V_LC1 = V_DD
V_LC4 output
voltage
V_LC4
V_LC5 output
voltage
V_LC5
Pull-up resistors
LCD voltage
dividing resistor
Supply current
(note)
R_L1
R_L2
R_LCD
I_DD1
V_IN = 0 V; T_A = 25°C
V_DD = 3.0 ± 10%; Ports 0–5
V_IN = 0 V; T_A = 25 °C
V_DD = 3.0 ± 10 %
RESET only
V_LCD = 2.7 V to 5.5 V
T_A = 25 °C
Run mode; V_DD=5.0V±10%
Crystal oscillator
C1 = C2 = 22 pF
V_DD = 3.0 V ± 10 %
I_DD2 Idle mode; V_DD=5.0 V± 0%
Crystal oscillator
C1 = C2 = 22 pF
V_DD = 3.0 V ± 10 %
6.0 MHz
4.19 MHz
6.0 MHz
4.19 MHz
6.0 MHz
4.19 MHz
6.0 MHz
4.19 MHz
Min
0.8 V_DD
– 0.15
0.6 V_DD
– 0.15
0.4 V_DD
– 0.15
0.2 V_DD
– 0.15
30
300
45
–
Typ
0.8 V_DD
0.6 V_DD
0.4 V_DD
0.2 V_DD
80
Max
0.8 V_DD
+ 0.15
0.6 V_DD
+ 0.15
0.4 V_DD
+ 0.15
0.2 V_DD
+ 0.15
200
500
800
65
80
6.0
12
4.5
9.0
2.9
5.8
2.0
4.0
1.3
2.6
1.2
2.4
0.6
1.2
0.4
0.8
Unit
V
kΩ
kΩ
mA
I_DD3 Run mode; V_DD = 3.0 V ± 10 %
32 kHz crystal oscillator
I_DD4 Idle mode; V_DD = 3.0 V ± 10 %
32 kHz crystal oscillator
I_DD5 Stop mode; V_DD = 5.0 V ± 10 %
Stop mode; V_DD = 3.0 V ± 10 %
20
40
µA
7
14
0.5
3
0.3
2
NOTES:
1. Supply current does not include current drawn through internal pull-up resistors, LCD voltage dividing resistors, and
ADC.
2. I_DD1 and I_DD2 include power consumption for subsystem clock oscillation.
3. I_DD3 and I_DD4 are current when main system clock oscillation stops and the subsystem clock is used.
4. I_DD5 is current when main system clock and subsystem clock oscillation stops.
20-6