K9XXG08UXA_06 Datasheet, PDF (3/50 Pages) Samsung semiconductor – 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory

K9WAG08U1A
K9K8G08U0A K9NBG08U5A
FLASH MEMORY
1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
PRODUCT LIST
Part Number
K9K8G08U0A-Y
K9WAG08U1A-Y
K9WAG08U1A-I
K9NBG08U5A-P
Vcc Range
2.70 ~ 3.60V
Organization
X8
PKG Type
TSOP1
52TLGA
TSOP1-DSP
FEATURES
• Voltage Supply
- 2.70V ~ 3.60V
• Organization
- Memory Cell Array : (1G + 32M) x 8bit
- Data Register : (2K + 64) x 8bit
• Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
• Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 25µs(Max.)
- Serial Access : 25ns(Min.)
* K9NBG08U5A : 50ns(Min.)
• Fast Write Cycle Time
- Page Program time : 200µs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles(with 1bit/512Byte
ECC)
- Data Retention : 10 Years
• Command Driven Operation
• Intelligent Copy-Back with internal 1bit/528Byte EDC
• Unique ID for Copyright Protection
• Package :
- K9K8G08U0A-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9WAG08U1A-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9WAG08U1A-ICB0/IIB0
52 - Pin TLGA (12 x 17 / 1.0 mm pitch)
- K9NBG08U5A-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
GENERAL DESCRIPTION
Offered in 1G x 8bit, the K9K8G08U0A is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most cost-
effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte
page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out
at 25ns(K9NBG08U5A : 50ns) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as com-
mand input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and
internal verification and margining of data. Even the write-intensive systems can take advantage of the K9K8G08U0A′s extended reli-
ability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The
K9K8G08U0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
An ultra high density solution having two 8Gb stacked with two chip selects is also available in standard TSOPI package and another
ultra high density solution having two 16Gb TSOPI package stacked with four chip selects is also available in TSOPI-DSP.
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