K9K8G08U1M Datasheet, PDF (29/41 Pages) Samsung semiconductor – 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory

K9K8G08U1M
K9F4G08U0M
Read ID Operation
Advance
FLASH MEMORY
CLE
CE
WE
ALE
RE
I/Ox
tAR
90h
Read ID Command
tREA
00h
Address 1cycle
ECh
Device
Code*
Maker Code Device Code
3rd cyc.*
4th cyc.*
Device
K9F4G08U0M
K9K8G08U1M
Device Code*(2nd Cycle)
3rd Cycle*
DCh
10h
Same as each K9F4G08U0M in it
4th Cycle*
95h
29