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S3CK225 Datasheet, PDF (234/256 Pages) Samsung semiconductor – CalmRISC 8-Bit CMOS MICROCONTROLLER
ELECTRICAL DATA
S3CK225/FK225
Table 22-2. D.C. Electrical Characteristics (Continued)
(TA = – 25 °C to + 85 °C, VDD = 2.0 V to 5.5 V)
Parameter
Symbol
Conditions
Input high leakage
current
ILIH1
VIN = VDD
All input pins except ILIH2
ILIH2 VIN = VDD ; XIN, XTIN
Input low leakage
current
ILIL1 VIN = 0 V
All input pins except ILIL2
ILIL2 VIN = 0 V; XIN, XTIN, RESET
Output high
leakage current
ILOH
VOUT = VDD
All I/O pins and output pins
Output low
leakage current
ILOL VOUT = 0 V
All I/O pins and output pins
Oscillator feedback
resistors
ROSC1 VDD = 5.0 V, TA = 25 °C
XIN = VDD, XOUT = 0 V
ROSC2 VDD = 5.0 V, TA = 25 °C
XTIN = VDD, XTOUT = 0 V
Pull-up resistor
RL1 VIN = 0 V; VDD = 5 V ± 10%
Port 0-7, TA = 25 °C
RL2 VIN = 0 V; VDD = 3 V ± 10%
TA = 25 °C, RESET only
LCD voltage
dividing resistor
RLCD TA = 25 °C
VLC1 output
voltage
VLC1
TA = 25 °C
VLCD = 2.5 V to 5.5 V
VLC0 output
voltage
VLC0 1/3 bias
COM output
voltage
deviation
VDC VDD = VLC2 = 3V
(VLCD-COMi)
IO = ± 15µA, (i = 0-3)
SEG output voltage VDS VDD = VLC2 = 3V
deviation
(VLCD-SEGi)
IO = ± 15µA, (i = 0-31)
Min
–
–
–
–
–
400
1500
25
110
60
2/3VDD
- 0.2V
1/3VDD
- 0.2V
–
–
Typ
–
–
–
–
–
750
3000
50
210
100
2/3VDD
1/3VDD
± 60
± 60
Max
3
20
–3
–20
3
–3
1200
4500
100
310
140
2/3VDD
+0.2V
1/3VDD
+0.2V
± 120
± 120
Unit
uA
kΩ
V
mV
22-2