K9F1G08U0C-PCB0T00 Datasheet, PDF (23/36 Pages) Samsung semiconductor – Samsung Semiconductor, Inc. Product Selection Guide

DDR SYNCHRONOUS SRAM
Type Density Organization Part
Number
# Pins- Vdd (V) Access Time
Package
tCD (ns)
Cycle Time
(MHz)
I/O Voltage Production
(V)
Status
Comments
512K x36
16Mb
1M x18
DDR
256K x36
8Mb
512K x18
K7D163674B 153-BGA
K7D161874B 153-BGA
K7D803671B 153-BGA
K7D801871B 153-BGA
1.8~2.5 2.3
1.8~2.5 2.3
2.5
1.7/1.9/2.1
2.5
1.7/1.9/2.1
330, 300
330, 300
333, 330, 250
333, 330, 250
1.5~1.9
Mass Production
1.5~1.9
Mass Production
1.5(Max 2.0) Not for new designs
1.5(Max 2.0) Not for new designs
K7I641882M 165-FBGA 1.8
0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8
Mass Production CIO-2B
4M x18
K7I641884M 165-FBGA 1.8
0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8
Mass Production CIO-4B
72Mb
K7J641882M 165-FBGA 1.8
K7I643682M 165-FBGA 1.8
0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8
0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8
Mass Production
Mass Production
SIO-2B
CIO-2B
2M x36
K7I643684M 165-FBGA 1.8
0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8
Mass Production CIO-4B
K7J643682M 165-FBGA 1.8
0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8
Mass Production SIO-2B
K7I321882C 165-FBGA 1.8
0.45
333,300,250
1.5,1.8
Mass Production CIO-2B
DDR
II CIO/
SIO
36Mb
2M x18
1M x36
K7I321884C 165-FBGA 1.8
0.45
K7J321882C 165-FBGA 1.8
0.45
K7I323682C 165-FBGA 1.8
0.45
K7I323684C 165-FBGA 1.8
0.45
333,300,250
333,300,250
333,300,250
333,300,250
1.5,1.8
1.5,1.8
1.5,1.8
1.5,1.8
Mass Production
Mass Production
Mass Production
Mass Production
CIO-4B
SIO-2B
CIO-2B
CIO-4B
K7J323682C 165-FBGA 1.8
0.45
333,300,250
1.5,1.8
Mass Production SIO-2B
K7I161882B 165-FBGA 1.8
0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8
Mass Production CIO-2B
1M x18
K7I161884B 165-FBGA 1.8
0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8
Mass Production CIO-4B
18Mb
K7J161882B 165-FBGA 1.8
K7J163682B 165-FBGA 1.8
0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8
0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8
Mass Production
Mass Production
SIO-2B
SIO-2B
512K x36
K7I163682B 165-FBGA 1.8
0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8
Mass Production CIO-2B
K7I163684B 165-FBGA 1.8
0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8
Mass Production CIO-4B
36Mb
DDR II+
2M x18
1M x36
K7K3218T2C 165-FBGA 1.8
0.45
K7K3236T2C 165-FBGA 1.8
0.45
CIO
1M x18
K7K1618T2C 165-FBGA 1.8
0.45
18Mb
512K x36
K7K1636T2C 165-FBGA 1.8
0.45
450, 400, 333
1.5
450, 400, 333
1.5
450, 400, 333
1.5
450, 400, 333
1.5
Mass Production
Mass Production
Mass Production
Mass Production
DDRII + CIO-2B
DDRII + CIO-2B
DDRII + CIO-2B
DDRII + CIO-2B
NOTES:
2B = Burst of 2
4B = Burst of 4
SIO = Separate I/O
CIO = Common I/O
For DDR II CIO/SIO: C-die use 330, 300, or 250MHz instad of 200MHz or 167MHz using a stable DLL circuit
For DDR II+ CIO: 2-clock latency is available. A 2.5-clock latency can be supported on 18Mb at 500Mhz and 36Mb at 450MHz
www.samsung.com/semi/sram
JANUARY 2009
DDR I / II / II+
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