K9F5608X0D Datasheet, PDF (22/35 Pages) Samsung semiconductor – 32M x 8 Bit NAND Flash Memory

K9F5608R0D
K9F5608U0D K9F5608D0D
Status Read Cycle
CLE
CE
WE
tCLS
tCS
tCLH
tCH
tWP
RE
I/Ox
tDS ^tDH
70h
FLASH MEMORY
tCLR
tWHR1
tCEA
tCHZ
tOH
tIR
tREA
tRHZ
tOH
Status Output
Read1 Operation (Read One Page)
CLE
CE
WE
ALE
RE
I/Ox
R/B
tWC
On K9F5608U0D_Y,P,V,F or K9F5608D0D_Y,P
CE must be held
low during tR
1)
tCEH
tCHZ
tOH
tWB
tAR
tCRY
tR
tRC
tRHZ
tOH
N Address
tRR
Read
CMD
A0~A7 A9~A16 A17~A24
Column Page(Row)
Address Address
Busy
m = 528 , Read CMD = 00h or 01h
Dout N Dout N+1 Dout N+2 Dout N+3
Dout m
tRB
1)
NOTES : 1) is only valid On K9F5608U0D_Y,P,V,F or K9F5608D0D_Y,P
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