K9F5608U0B Datasheet, PDF (21/34 Pages) Samsung semiconductor – 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

K9F5608U0B-VCB0,VIB0,FCB0,FIB0
K9F5608Q0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
K9F5616Q0B-DCB0,DIB0,HCB0,HIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
* Input Data Latch Cycle
CLE
tCLH
tCH
CE
ALE
tALS
tWC
WE
I/Ox
tWP
tWH
tDS ^tDH
DIN 0
tWP
tDS ^tDH
DIN 1
tWP
tDS ^tDH
DIN n
* Serial access Cycle after Read(CLE=L, WE=H, ALE=L)
CE
RE
I/Ox
R/B
tRC
tREA
tRP
tREH
tREA
tRHZ*
Dout
tRR
Dout
tREA
tCHZ*
tOH
tRHZ*
tOH
Dout
NOTES : Transition is measured ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
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