K9K1208Q0C Datasheet, PDF (2/39 Pages) Samsung semiconductor – 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
Document Title
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No. History
2.6
1. tREA value of 1.8V device is changed.
K9K12XXQ0C : tREA 30ns --> 35ns
2. Errata is deleted.
2.7
1. Command table is edited.
2. AC parameters are changed.
tWC tWH tWP tRC tREH tRP tREA tCEA
K9K12XXU0C
K9K12XXD0C 50 15 25 50 15 25 30 45
K9K12XXQ0C 60 20 40 60 20 40 40 55
2.8
1. AC parameters are changed.
tWC tWH tWP tRC tREH tRP tREA tCEA
K9K1208Q0C 50 15 25 50 15 25 35 45
K9K1216Q0C 60 20 40 60 20 40 40 55
2.9
1. The Test Condition for Stand-by Currents are changed.
ISB1: CE=VIH, WP=0V/VCC -->> CE=VIH, WP=LOCKPRE=0V/VCC
ISB2: CE=VCC-0.2, WP=0V/VCC -->> CE=VCC-0.2, WP=LOCKPRE=0V/VCC
3.0
1. NAND Flash Technical Notes is changed.
-Invalid block -> initial invalid block ( page 14 )
-Error in write or read operation ( page 15 )
-Program Flow Chart ( page 15 )
2. TBGA->FBGA
Draft Date
Aug. 20th. 2003
Remark
Oct. 28th. 2003
Dec. 17th. 2003
Apr. 22th 2004
Oct. 25th. 2004
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
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