K7M163635B Datasheet, PDF (2/19 Pages) Samsung semiconductor – 512Kx36 & 1Mx18 Flow-Through NtRAM

K7M163635B
K7M161835B
512Kx36 & 1Mx18 Flow-Through NtRAM^TM
Document Title
512Kx36 & 1Mx18-Bit Flow Through NtRAM^TM
Revision History
Rev. No. History
0.0
1. Initial document.
0.1
1. Update the DC current spec(ICC, ISB)
0.2
1. Change the ISB,ISB1,ISB2
- ISB ; from 120mA to 170mA
- ISB1 ; from 80mA to 150mA
- ISB2 ; from 80mA to 130mA
0.3
1. Remove the 1.8V Vdd voltage level
0.4
1. Remove the -75 speed bin
1.0
1. Finalize the datasheet
2.0
1. Add the overshoot timing
3.0
1. Change ordering information
Draft Date
Mar. 23. 2004
May. 21. 2004
Sep. 21. 2004
Remark
Advance
Preliminary
Preliminary
Oct. 18. 2004
Jan. 04. 2004
July 18. 2005
Feb. 16. 2006
Apr. 04. 2006
Preliminary
Preliminary
Final
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev. 3.0 April 2006
-2-