K6F1616T6B Datasheet, PDF (2/10 Pages) Samsung semiconductor – 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F1616T6B Family
CMOS SRAM
1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
• Process Technology: Full CMOS
• Organization: 1M x16
• Power Supply Voltage: 2.7~3.6V
• Low Data Retention Voltage: 1.5V(Min)
• Three State Outputs
• Package Type: 48-TSOP1-1220F, 48-TBGA - 7.00x7.00
GENERAL DESCRIPTION
The K6F1616T6B families are fabricated by SAMSUNG′s
advanced full CMOS process technology. The families support
industrial operating temperature ranges. The families also sup-
port low data retention voltage for battery back-up operation
with low data retention current.
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range
K6F1616T6B-F
Industrial(-40~85°C)
2.7~3.6V
Speed
55¹⁾/70ns
Power Dissipation
Standby Operating
(ISB1, Typ.) (ICC1, Max)
5µA²⁾
5mA
PKG Type
48-TSOP1-1220F
48-TBGA - 7.00x7.00
1. The parameter is measured with 30pF test load.
2. Typical value is measured at VCC=3.3V, TA=25°C and not 100% tested.
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
A15
1
A14
2
A13
3
A12
4
A11
5
A10
6
A9
7
A8
8
A19
9
NC
10
WE
11
CS2
12
NC
13
UB
14
LB
15
A18
16
A17
17
A7
18
A6
19
A5
20
A4
21
A3
22
A2
23
A1
24
48-TSOP1-1220F
48
A16
47
NC
46
Vss
45
I/O16
44
I/O8
43
I/O15
42
I/O7
41
I/O14
40
I/O6
39
I/O13
38
I/O5
37
Vcc
36
I/O12
35
I/O4
34
I/O11
33
I/O3
32
I/O10
31
I/O2
30
I/O9
29
I/O1
28
OE
27
Vss
26
CS1
25
A0
1
2
3
4
5
6
A
LB
OE
A0
A1
A2
CS2
Row
Addresses
I/O1~I/O8
I/O9~I/O16
Clk gen.
Precharge circuit.
Vcc
Vss
Row
select
Memory
Cell
Array
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
Column Addresses
B
I/O9
UB
A3
A4
CS1
I/O1
C
I/O10 I/O11
A5
A6
I/O2
I/O3
D
Vss
I/O12
A17
A7
I/O4
Vcc
E
Vcc
I/O13
Vss
A16
I/O5
Vss
F
I/O15 I/O14
A14
A15
I/O6
I/O7
G
I/O16
A19
A12
A13
WE
I/O8
H
A18
A8
A9
A10
A11
NC
48-TBGA: Top View (Ball Down)
CS1
CS2
OE
WE
Control Logic
UB
LB
Name
Function
Name
Function
CS1, CS2 Chip Select Inputs Vcc Power
OE Output Enable Input Vss Ground
WE Write Enable Input UB Upper Byte(I/O9~16)
A0~A19 Address Inputs
LB Lower Byte(I/O1~8)
I/O1~I/O16 Data Inputs/Outputs NC No Connection
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2
Revision 1.0
August 2003