K4N51163QG Datasheet, PDF (2/3 Pages) Samsung semiconductor – Graphic Memory

Product Guide
Apr. 2010
Graphic Memory
1. GRAPHIC MEMORY ORDERING INFORMATION
1 2 3 4 5 6 7 8 9 10
11 12 13 14
K 4 X XX XX X X X - X X XX
SAMSUNG Memory
DRAM
Product
Density & Refresh
Organization
1. SAMSUNG Memory
2. DRAM
3. Product
N : gDDR2 SDRAM
W : gDDR3 SDRAM
J : GDDR3 SGRAM
G : GDDR5 SGRAM
4~5. Density & Refresh
51 : 512M, 8K/64ms
52 : 512M, 8K/32ms
10 : 1G, 8K/32ms
1G : 1G, 8K/64ms
2G : 2G, 8K/64ms
4G : 4G, 8K/64ms
6~7. Organization
16 : x16
32 : x32
8. Bank
3 : 4Banks
4 : 8Banks
9. Interface ( VDD, VDDQ)
Q : SSTL_2 (1.8V, 1.8V)
5 : SSTL_2 (1.8V,1.8V,LP)
6 : SSTL_15 (1.5V,1.5V)
F : POD_15 (1.5V,1.5V)
K : POD_18 (1.8V,1.8V)
Speed
Temperature & Power
Package Type
Revision
Interface (VDD, VDDQ)
Bank
10. Revision
M : 1st Gen.
B : 3rd Gen.
D : 5th Gen.
F : 7th Gen.
H : 9th Gen.
Q : 17th Gen.
A : 2nd Gen.
C : 4th Gen.
E : 6th Gen.
G : 8th Gen.
I : 10th Gen.
Z : 26th Gen.
11. Package Type
gDDR2
H : 84FBGA(Halogen Free & Lead Free)
B : 84FBGA(Halogen Free & Lead Free & Flip Chip)
gDDR3
E : 100FBGA(Halogen Free & Lead Free)
H : 96FBGA(Halogen Free & Lead Free)
GDDR3
B : 136FBGA(Lead Free)
H : 136FBGA(Halogen Free & Lead Free)
GDDR5
H : 170FBGA(Halogen Free & Lead Free)
12. Temperature & Power(VDD)
C : Commercial Normal
J : Commercial High
L : Commercial Low
13~14. Speed
1A^{1) : 0.935ns (2.1Gbps) 28 : 0.28ns (7.0Gbps)}
11^{2) : 1.07ns (1.8Gbps) 03 : 0.33ns (6.0Gbps)}
12 : 1.25ns (1.6Gbps) 04 : 0.40ns (5.0Gbps)
14 : 1.4ns (1.4Gbps) 05 : 0.50ns (4.0Gbps)
15 : 1.5ns (1.3Gbps) 5C : 0.56ns (3.6Gbps)
16 : 1.6ns (1.2Gbps) 06 : 0.62ns (3.2Gbps)
18 : 1.8ns (1.1Gbps) 6A : 0.66ns (3.0Gbps)
19 : 1.875ns (1.06Gbps) 07 : 0.71ns (2.8Gbps)
20 : 2.0ns (1.0Gbps) 7A : 0.77ns (2.6Gbps)
22 : 2.2ns (0.9Gbps) 08 : 0.8ns (2.4Gbps)
25 : 2.5ns (0.8Gbps) 09 : 0.9ns (2.2Gbps)
NOTE :
1)Graphic high speed binning was unified to EDP binning(2000Mbps→2133Mbps)
2)Graphic high speed binning was unified to EDP binning(1800Mbps→1866Mbps)
-2-