K3P6C2000B-SC Datasheet, PDF (2/4 Pages) Samsung semiconductor – 32M-Bit (2Mx16 /1Mx32) CMOS MASK ROM

K3P6C2000B-SC
CMOS MASK ROM
ABSOLUTE MAXIMUM RATINGS
Item
Voltage on Any Pin Relative to VSS
Temperature Under Bias
Storage Temperature
Symbol
VIN
TBIAS
TSTG
Rating
-0.3 to +7.0
-10 to +85
-55 to +150
Unit
V
°C
°C
NOTE : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the
conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
RECOMMENDED OPERATING CONDITIONS(Voltage reference to VSS, TA=0 to 70°C)
Item
Symbol
Min
Typ
Max
Unit
Supply Voltage
VCC
4.5
5.0
5.5
V
Supply Voltage
VSS
0
0
0
V
DC CHARACTERISTICS
Parameter
Operating Current
Standby Current(TTL)
Standby Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage, All Inputs
Input Low Voltage, All Inputs
Output High Voltage Level
Output Low Voltage Level
Symbol
ICC
ISB1
ISB2
ILI
ILO
VIH
VIL
VOH
VOL
Test Conditions
Cycle=5MHz, all outputs open
CE=OE=VIL, VIN=0.6V to 2.4V (AC Test Condition)
CE=VIH, all outputs open
CE=VCC, all outputs open
VIN=0 to VCC
VOUT=0 to VCC
IOH=-400µA
IOL=2.1mA
Min
Max
-
150
-
1
-
50
-
10
-
10
2.2
VCC+0.3
-0.3
0.8
2.4
-
-
0.4
NOTE : Minimum DC Voltage(VIL) is -0.3V an input pins. During transitions, this level may undershoot to -2.0V for periods <20ns.
Maximum DC voltage on input pins(VIH) is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
Unit
mA
mA
µA
µA
µA
V
V
V
V
MODE SELECTION
CE
OE
H
X
L
H
L
L
WORD
X
X
H
L
Q31/A-1
X
X
Output
Input
Mode
Standby
Operating
Operating
Operating
Data
High-Z
High-Z
Q0~Q31:Dout
Q0~Q15 : Dout
Q16~Q30 : Hi-Z
Power
Standby
Active
Active
Active
CAPACITANCE(TA=25°C, f=1.0MHz)
Item
Output Capacitance
Input Capacitance
Symbol
Test Conditions
Min
COUT
VOUT=0V
-
CIN
VIN=0V
-
NOTE : Capacitance is periodically sampled and not 100% tested.
Max
Unit
12
pF
12
pF