KBE00S009M Datasheet, PDF (19/86 Pages) Samsung semiconductor – 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2

KBE00S009M-D411
MCP MEMORY
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528bytes page registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for
voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and read-
ing would provide significant savings in power consumption.
Figure 6. Program Operation with CE don’t-care.
CLE
CE
CE don’t-care
WE
ALE
I/OX
80h Start Add.(4Cycle)
Data Input
Data Input
10h
tCS
tCH
CE
tWP
WE
CE
RE
I/OX
tCEA
tREA
out
Figure 7. Read Operation with CE don’t-care.
CLE
CE
RE
ALE
R/B
WE
I/OX
tR
00h
Start Add.(4Cycle)
19
CE don’t-care
Data Output(sequential)
Revision 1.0
May 2005