K9F4G08U0D-SIB0000 Datasheet, PDF (17/28 Pages) Samsung semiconductor – Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage

NtRAM
Type
Density Organization Part
Number
Package
Operating Vdd
Mode
(V)
2Mx36
K7N643645M 100-TQFP, 165FBGA SPB
2.5
72Mb
4Mx18
K7N641845M 100-TQFP, 165FBGA SPB
2.5
1Mx36
K7N323635C 100-TQFP, 165FBGA SPB
3.3, 2.5
36Mb
2Mx18
1Mx36
K7N321835C 100-TQFP, 165FBGA SPB
K7M323635C 100-TQFP
FT
3.3, 2.5
3.3, 2.5
2Mx18
K7M321835C 100-TQFP
FT
3.3, 2.5
1Mx18
K7N161831B 100-TQFP, 165FBGA SPB
3.3, 2.5
18Mb
512Kx36
1Mx18
K7N163631B
K7M161835B
100-TQFP, 165FBGA
100-TQFP
SPB
FT (SB)
3.3, 2.5
3.3
512Kx36
K7M163635B 100-TQFP
FT (SB)
3.3
NtRAM
256Kx36
512Kx18
K7N803601B
K7N801801B
100-TQFP
100-TQFP
SPB
3.3
SPB
3.3
256Kx36
K7N803609B 100-TQFP
SPB
3.3
512Kx18
K7N801809B 100-TQFP
SPB
3.3
256Kx36
8Mb
512Kx18
K7N803645B
K7N801845B
100-TQFP
100-TQFP
SPB
2.5
SPB
2.5
256Kx36
K7N803649B 100-TQFP
SPB
2.5
512Kx18
K7N801849B 100-TQFP
SPB
2.5
512Kx18
K7M801825B 100-TQFP
FT
3.3
256Kx36
K7M803625B 100-TQFP
FT
3.3
128Kx36
4Mb
256Kx18
K7N403609B
K7N401809B
100-TQFP
100-TQFP
SPB
3.3
SPB
3.3
SPB and FT 4Mb 256Kx18
K7B401825B 100-TQFP
SB
3.3
NOTES:
All TQFP products are lead free
NtRAM speed recommendations: For 200MHz use 250MHz; For 133MHz use 167MHz
NtRAM speed recommendation: Use 7.5ns Access Time use 6.5ns Access Time
Recommended SPB speeds are 250MHz and 167MHz Recommended SB Acess Speed is 7.5ns
Access Time
tCD (ns)
2.6, 3.5
2.6, 3.5
2.6, 3.5
2.6, 3.5
7.5
7.5
2.6, 3.5
2.6, 3.5
6.5
6.5
3.5
3.5
2.6
2.6
3.5
3.5
2.6
2.6
6.5
6.5
3
3
6.5
Speed
tCYC (MHz)
250, 167
250, 167
250, 167
250, 167
118
118
250, 167
250, 167
133
133
167
167
250
250
167
167
250
250
133
133
200
200
133
I/O Voltage Production
(V)
Status
2.5
Mass Production
2.5
Mass Production
3.3, 2.5 Mass Production
3.3, 2.5 Mass Production
3.3, 2.5 Mass Production
3.3, 2.5 Mass Production
3.3, 2.5 Mass Production
3.3, 2.5 Mass Production
3.3, 2.5 Mass Production
3.3, 2.5 Mass Production
3.3,2.5
Not for new designs
3.3,2.5
Not for new designs
3.3,2.5
Not for new designs
3.3,2.5
Not for new designs
2.5
Not for new designs
2.5
Not for new designs
2.5
Not for new designs
2.5
Not for new designs
3.3, 2.5 Not for new designs
3.3, 2.5 Not for new designs
3.3,2.5
Not for new designs
3.3,2.5
Not for new designs
3.3, 2.5 Not for new designs
Late-Write RR SRAM
Density Organization Part Number
Package
32Mb
8Mb
1Mx36
2Mx18
256Kx36
512Kx18
256Kx36
512Kx18
K7P323674C
K7P321874C
K7P803611B
K7P801811B
K7P803666B
K7P801866B
119-BGA
119-BGA
119-BGA
119-BGA
119-BGA
119-BGA
Operating
Mode
SP
SP
SP
SP
SP
SP
Vdd (V)
1.8 / 2.5V
1.8 / 2.5V
3.3
3.3
2.5
2.5
Access Time
tCD (ns)
1.6, 2.0
1.6, 2.0
1.6
1.6
2
2
Speed tCYC
(MHz)
300,250
300,250
300
300
250
250
I/O Voltage (V) Production Status
1.5 (Max 1.8)
1.5 (Max 1.8)
1.5 (Max.2.0)
1.5 (Max.2.0)
1.5 (Max.2.0)
1.5 (Max.2.0)
Mass Production
Mass Production
Mass Production
Mass Production
Mass Production
Mass Production
www.samsung.com/semi/flash
2H 2010
NtRAM & Late Write RR SRAM
17