K4X51163PC Datasheet, PDF (17/23 Pages) Samsung semiconductor – 32M x16 Mobile-DDR SDRAM

K4X51163PC - L(F)E/G
Mobile-DDR SDRAM
AC Overshoot/Undershoot Specification for Address & Control Pins
Parameter
Maximum peak Amplitude allowed for overshoot area
Maximum peak Amplitude allowed for undershoot area
Maximum overshoot area above VDD
Maximum undershoot area below VSS
Specification
0.9V
0.9V
3V-ns
3V-ns
Maximum Amplitude
Overshoot Area
Volts ^VDD
(V)
VSS
Maximum Amplitude
Undershoot Area
Time (ns)
Figure.8 AC Overshoot and Undershoot Definition for Address and Control Pins
AC Overshoot/Undershoot Specification for CLK, DQ, DQS and DM Pins
Parameter
Maximum peak Amplitude allowed for overshoot area
Maximum peak Amplitude allowed for undershoot area
Maximum overshoot area above VDDQ
Maximum undershoot area below VSSQ
Specification
0.9V
0.9V
3V-ns
3V-ns
Maximum Amplitude
Overshoot Area
Volts ^VDDQ
(V)
VSSQ
Maximum Amplitude
Undershoot Area
Time (ns)
Figure.9 AC Overshoot and Undershoot Definition for CLK, DQ, DQS and DM Pins
February 2006