M366S1723ET Datasheet, PDF (16/26 Pages) Samsung semiconductor – SDRAM Unbuffered Module

64MB, 128MB, 256MB Unbuffered DIMM
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE.
Parameter
Symbol
CLK cycle
time
CAS latency=3
tCC
CAS latency=2
CLK to valid
output delay
CAS latency=3
CAS latency=2
tSAC
Output data
hold time
CAS latency=3
CAS latency=2
tOH
CLK high pulse width
tCH
CLK low pulse width
tCL
Input setup time
tSS
Input hold time
tSH
CLK to output in Low-Z
tSLZ
CLK to output ^{CAS latency=3}
in Hi-Z
CAS latency=2
tSHZ
- 7A
Min
Max
7.5
1000
10
5.4
6
3
3
2.5
2.5
1.5
0.8
1
5.4
6
Notes : _{1. Parameters depend on programmed CAS latency.}
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
SDRAM
Unit
Note
ns
1
ns
1,2
ns
2
ns
3
ns
3
ns
3
ns
3
ns
2
ns
Rev. 1.3 February 2004