K9F1208Q0A-XXB0 Datasheet, PDF (15/45 Pages) Samsung semiconductor – 512Mb/256Mb 1.8V NAND Flash Errata

K9F1208U0A-VCB0,VIB0,FCB0,FIB0
K9F1208Q0A-DCB0,DIB0,HCB0,HIB0
K9F1208U0A-YCB0,YIB0,PCB0,PIB0
K9F1208U0A-DCB0,DIB0,HCB0,HIB0
K9F1216Q0A-DCB0,DIB0,HCB0,HIB0
K9F1216U0A-YCB0,YIB0,PCB0,PIB0
K9F1216U0A-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
AC Timing Characteristics for Command / Address / Data Input
Parameter
CLE Set-up Time
CLE Hold Time
CE Setup Time
CE Hold Time
Symbol
Min
tCLS
0
tCLH
10
tCS
0
tCH
10
Max
-
-
.-
-
WE Pulse Width
tWP
25 ⁽¹⁾
-
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
tALS
0
-
tALH
10
-
tDS
20
-
tDH
10
-
tWC
45
-
tWH
15
-
NOTE :
1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
AC Characteristics for Operation
Parameter
Symbol
Min
Data Transfer from Cell to Register
tR
-
ALE to RE Delay
tAR
10
CLE to RE Delay
tCLR
10
Ready to RE Low
tRR
20
RE Pulse Width
tRP
25
WE High to Busy
tWB
-
Read Cycle Time
tRC
50
CE Access Time
tCEA
-
RE Access Time
tREA
-
RE High to Output Hi-Z
tRHZ
-
CE High to Output Hi-Z
tCHZ
-
RE or CE High to Output hold
tOH
15
RE High Hold Time
tREH
15
Output Hi-Z to RE Low
tIR
0
WE High to RE Low
tWHR
60
Device Resetting Time(Read/Program/Erase)
tRST
-
Last RE High to Busy(at sequential read)
tRB
-
K9F1208U0A-
Y,V,P,F only
CE High to Ready(in case of interception by CE at read)
tCRY
-
CE High Hold Time(at the last serial read)⁽²⁾
tCEH
100
NOTE :
1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
3. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Max
12
-
-
-
-
100
-
45
30
30
20
-
-
-
-
5/10/500⁽¹⁾
100
50 +tr(R/B)⁽³⁾
-
Unit
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
14