K9F1208D0A Datasheet, PDF (14/46 Pages) Samsung semiconductor – 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

K9F1208D0A K9F1216D0A
K9F1208U0A K9F1216U0A
PROGRAM / ERASE CHARACTERISTICS
Parameter
Symbol
Min
Program Time
tPROG
-
Dummy Busy Time for Multi Plane Program
tDBSY
Number of Partial Program Cycles
in the Same Page
Main Array
Spare Array
Nop
-
-
Block Erase Time
tBERS
-
FLASH MEMORY
Typ
Max
Unit
200
500
µs
1
10
µs
-
1
cycle
-
2
cycles
2
3
ms
AC TIMING CHARACTERISTICS FOR COMMAND / ADDRESS / DATA INPUT
Parameter
Min
Max
Symbol
K9F12XXD0A K9F12XXU0A K9F12XXD0A K9F12XXU0A
Unit
CLE setup Time
tCLS
0
0
-
-
ns
CLE Hold Time
tCLH
10
10
-
-
ns
CE setup Time
tCS
0
0
-
-
ns
CE Hold Time
tCH
10
10
-
-
ns
WE Pulse Width
tWP
25⁽¹⁾
25⁽¹⁾
-
-
ns
ALE setup Time
tALS
0
0
-
-
ns
ALE Hold Time
tALH
10
10
-
-
ns
Data setup Time
tDS
20
20
-
-
ns
Data Hold Time
tDH
10
10
-
-
ns
Write Cycle Time
tWC
50
50
-
-
ns
WE High Hold Time tWH
15
15
-
-
ns
NOTE: 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
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