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S3C7574 Datasheet, PDF (13/33 Pages) Samsung semiconductor – Product Overview Address Spaces Addressing Modes Memory Map SAM47 Instruction Set
S3C7574/P7574 (Preliminary Spec)
ELECTRICAL DATA
Table 14-2. D.C. Electrical Characteristics (Continued)
(TA = – 40 °C to + 85 °C, VDD = 1.8 V to 5.5 V)
Parameter
Symbol
Conditions
Min
Output low
VOL1 VDD = 4.5 V to 5.5 V
–
voltage
IOL = 15 mA, Ports 2, 3, 6
VOL2 VDD = 4.5 V to 5.5 V
–
IOL = 100 µA; Port 8 only
Input high
ILIH1
VIN = VDD
–
leakage current
All input pins except those
specified below for ILIH2
ILIH2
VIN = VDD
XIN, XOUT and XTIN
Input low
ILIL1
VIN = 0 V
–
leakage current
All input pins except XIN, XOUT,
and XTIN
ILIL2
VIN = 0 V
XIN, XOUT, and XTIN
Output high
ILOH1 VOUT = VDD
–
leakage current
All output pins
Output low
leakage current
ILOL
VOUT = 0 V
All output pins
Pull-up resistor
RL1
VIN = 0 V; VDD = 5 V
25
Ports 1, 2, 3, 6
VDD = 3 V
50
RL2
VIN = 0 V; VDD = 5 V
100
RESET
VDD = 3 V
200
LCD voltage
RLCD TA = 25 °C
100
dividing resistor
COM output
RCOM VDD = 5 V
−
impedance
VDD = 3 V
SEG output
RSEG VDD = 5 V
impedance
VDD = 3 V
COM output
VDC VDD = 5 V (VLC0–COMi)
–
voltage
deviation
IO = ± uA (I = 0–3)
Typ
0.4
–
–
–
–
50
100
250
500
150
3
5
3
5
± 45
Max
Units
2
V
1
3
µA
20
–3
– 20
3
µA
–3
100
KΩ
200
400
800
200
6
15
6
15
± 90
mV
14-3