S1C7309X01 Datasheet, PDF (12/25 Pages) Samsung semiconductor – B/W CCD PROCESSOR

S1C7309X01
B/W CCD PROCESSOR
ELECTRIC CHARACTERISTICS (V_CC=5 V, Ta=25 °C)
Characteristics
Operating Voltage
Supply Current
VREF DC
AGC Max Ctrl Min Gain
AGC Ctrl Min Gain
AGC Ctrl Max Gain
AGC Ctrl 10dB Gain
AGC Out DC
Detect Out DC Level
Iris Amp Out DC Level
Iris Amp Gain
Linear Amp DC Level
Linear Amp Gain
Condition
Spec
Symbol
Unit
Min. Typ. Max.
-
VCC
4.75 5.0 5.25 V
-
ICC
29 46 63 mA
-
VREF
2.9 3.1 3.3
V
MAX-CTL=5 V, GAIN-CTL=1.5 V
DATA-IN=100 mV
G04A
-
18
20
dB
MAX-CTL=5 V, GAIN-CTL=5.0 V
DATA-IN=500 mV
G04B
2
4
6
dB
MAX-CTL=0 V, GAIN-CTL=1.5 V G04B
30 32
-
dB
DATA-IN=30 mV
MAX-CTL=0 V, GAIN-CTL=3.6 V
DATA-IN=320 mV
G04B
8
10 12
dB
-
V04
1.6 1.9 2.2
V
-
V08
1.8 2.0 2.2
V
-
V40
1.05 1.25 1.45 V
DATA-IN=300 mV, f=500 kHz
G40
8
10 12
dB
GAMMA-CTL=5.0 V
V17L
1.5 1.8 2.1
V
GAMMA-CTL=5.0 V, VIN=500mV G17L
1.6 2.6 3.6 dB
12