M470T3354CZ3 Datasheet, PDF (12/18 Pages) Samsung semiconductor – DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC

256MB, 512MB, 1GB Unbuffered SODIMMs
DDR2 SDRAM
Operating Current Table(1-2) (TA=0^oC, VDD= 1.9V)
M470T2953CZ3/M470T2953CZ0 : 128Mx64 1GB Module
800@CL=5
667@CL=5
533@CL=4
400@CL=3
Symbol
Unit
CE7
LE7
CE6
LE6
CD5
LD5
CCC
LCC
IDD0
TBD
1,000
800
920
760
920
760
mA
IDD1
TBD
1,120
880
1,040
840
1,040
840
mA
IDD2P
TBD
128
80
128
72
128
72
mA
IDD2Q
TBD
560
480
480
400
480
400
mA
IDD2N
TBD
640
560
560
480
560
480
mA
IDD3P-F
TBD
480
400
480
400
480
400
mA
IDD3P-S
TBD
192
128
192
128
192
128
mA
IDD3N
TBD
760
640
680
560
680
560
mA
IDD4W
TBD
1,440
1,320
1,240
1,120
1,160
1,000
mA
IDD4R
TBD
1,480
1,360
1,280
1,160
1,160
1,040
mA
IDD5
TBD
1,520
1,360
1,400
1,240
1,400
1,240
mA
IDD6
TBD
128
64
128
64
128
64
mA
IDD7
TBD
2,080
1,720
2,040
1,680
2,040
1,680
mA
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Notes
Input/Output Capacitance (VDD=1.8V, VDDQ=1.8V, TA=25^oC)
Parameter
Non-ECC
Symbol
Input capacitance, CK and CK
CCK
Input capacitance, CKE , CS, Addr, RAS, CAS, WE CI
Input/output capacitance, DQ, DM, DQS, DQS
CIO(400/533)
CIO(667/800)
* DM is internally loaded to match DQ and DQS identically.
Min
Max
M470T6554CZ3
M470T6554CZ0
-
32
-
34
-
10
-
9
Min
Max
M470T3354CZ3
M470T3354CZ0
-
24
-
34
-
6
-
5.5
Min
Max
M470T2953CZ3
M470T2953CZ0
-
48
-
42
-
10
-
9
Units
pF
Rev. 1.2 Aug. 2005