K4H560438E-GC Datasheet, PDF (12/24 Pages) Samsung semiconductor – 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)

DDR SDRAM 256Mb E-die (x4, x8)
DDR SDRAM I_DD spec table
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
Normal
Low power
IDD7A
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
Normal
Low power
IDD7A
B3(DDR333@CL=2.5)
90
110
3
25
20
35
55
140
160
170
3
1.5
260
B3(DDR333@CL=2.5)
90
115
3
25
20
35
55
160
160
170
3
1.5
280
64Mx4 (K4H560438E)
A2(DDR266@CL=2.0)
80
100
3
20
18
30
45
120
135
160
3
1.5
240
32Mx8 (K4H560838E)
A2(DDR266@CL=2.0)
80
105
3
20
18
30
45
140
135
160
3
1.5
250
DDR SDRAM
(V_DD=2.7V, T = 10°C)
B0(DDR266@CL=2.5)
80
100
3
20
18
30
45
120
135
160
3
1.5
240
B0(DDR266@CL=2.5)
80
105
3
20
18
30
45
140
135
160
3
1.5
250
Unit Notes
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA Optional
mA
Unit Notes
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA Optional
mA
Rev. 1.3 April, 2005