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S3C8478 Datasheet, PDF (11/24 Pages) Samsung semiconductor – S3C8478/C8475 MICROCONTROLLER
S3C8478/C8475/P8475
ELECTRICAL DATA
Table 14-2. D.C. Electrical Characteristics
(TA = − 40 °C to + 85 °C, VDD = 1.8 V to 5.5 V)
Parameter Symbol
Test Conditions
Min
Typ
Input High
Voltage
VIH1 Ports 0, 1, 2, 3 ,4
VDD = 2.7 to 5.5 V 0.8 VDD
–
and RESET
Input Low
Voltage
VIH3 XIN, and XOUT
VDD–0.1
VIL1 Ports 0, 1, 2, 3, 4 VDD = 2.7 to 5.5 V
–
–
and RESET
Output High
Voltage
VIL3 XIN and XOUT
VOH IOH = – 1 mA
VDD = 4.5 to 5.5 V VDD–1.0 –
Ports 0, 1, 2, 3, 4
Output Low
Voltage
VOL1 IOL = 15 mA
VDD = 4.5 to 5.5 V
–
0.4
Port 0, and 4
VOL2 IOL = 4 mA
VDD = 4.5 to 5.5 V
0.4
Ports 1, 2, and 3
Input High
Leakage Current
Input Low
Leakage Current
Output High
Leakage Current
ILIH1
ILIH2
ILIL1
ILIL2
ILOH
All input pins except
ILIH2 and RESET
XIN, and XOUT
All input pins except
ILIL2
XIN, and XOUT
All output pins
VIN = VDD
VIN = VDD
VIN = 0 V
VIN = 0 V
VOUT = VDD
–
–
–
–
–
–
Output Low
ILOL All output pins
Leakage Current
VOUT = 0 V
–
–
Pull-up Resistor
RP1 VIN = 0 V, Ports 0-4 VDD = 5 V
30
47
RP1 RESET
VDD = 5 V
100
200
Supply Current
IDD1 RUM mode
VDD = 4.5 to 5.5 V
–
10
12 MHz CPU clock
3 MHz CPU clock VDD = 1.8 to 2.2 V
1.1
IDD2 Idle mode
VDD = 4.5 to 5.5 V
–
4
12 MHz CPU clock
3 MHz CPU clock VDD = 1.8 to 2.2 V
0.6
IDD3 Stop mode
VDD = 4.5 to 5.5 V
–
0.1
VDD = 1.8 to 2.2 V
0.1
Max
VDD
0.2
VDD
0.1
–
2.0
2.0
1
20
–1
– 20
2
–2
70
350
20
3
8
1.5
5
3
Unit
V
V
V
V
uA
uA
uA
uA
KΩ
mA
uA
14-3