K7Q163662B Datasheet, PDF (11/17 Pages) Samsung semiconductor – 512Kx36 & 1Mx18 QDRTM b2 SRAM

K7Q163662B
K7Q161862B
512Kx36 & 1Mx18 QDR^TM b2 SRAM
AC TEST CONDITIONS
Parameter
Symbol Value Unit
Core Power Supply Voltage
VDD
1.7~2.6 V
Output Power Supply Voltage
VDDQ 1.4~1.9 V
Input High/Low Level
VIH/VIL 1.25/0.25 V
Input Reference Level
VREF
0.75
V
Input Rise/Fall Time
TR/TF 0.3/0.3 ns
Output Timing Reference Level
VDDQ/2
V
Note: Parameters are tested with RQ=250Ω
AC TEST OUTPUT LOAD
VREF ^0.75V
VDDQ/2
SRAM
50Ω
Zo=50Ω
250Ω
ZQ
PIN CAPACITANCE
PRMETER
SYMBOL
Address Control Input Capacitance
CIN
Input and Output Capacitance
COUT
Clock Capacitance
CCLK
Note: 1. Parameters are tested with RQ=250Ω and VDDQ=1.5V.
2. Periodically sampled and not 100% tested.
TESTCONDITION
VIN=0V
VOUT=0V
-
TYP
MAX
Unit NOTES
4
5
pF
6
7
pF
5
6
pF
APPLICATION INFORMATION
1Mx18
SRAM#1
SRAM#4
R=250Ω
R=250Ω
Vt
D0-17
ZQ
Q0-17
R
SA _{R W BW0 BW1 C C K K}
ZQ
D0-17
Q0-17
SA _{RW BW0 BW1 C C K K}
Data In
Data Out
Address
R
W
BW0-7
MEMORY
CONTROLLER
Return CLK
Source CLK
Return CLK
Source CLK
Vt
Vt
R=50Ω Vt=VREF
Vt
Vt
R
- 11 -
Mar. 2004
Rev 1.0