K4S280432F-UC Datasheet, PDF (11/14 Pages) Samsung semiconductor – 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

SDRAM 128Mb F-die (x4, x8, x16)
CMOS SDRAM
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
Parameter
Symbol
CLK cycle
time
CAS latency=3
tCC
CAS latency=2
CLK to valid
output delay
CAS latency=3
CAS latency=2
tSAC
Output data
hold time
CAS latency=3
CAS latency=2
tOH
CLK high pulse width
tCH
CLK low pulse width
tCL
Input setup time
tSS
Input hold time
tSH
CLK to output in Low-Z
tSLZ
CLK to output ^{CAS latency=3}
in Hi-Z
CAS latency=2
tSHZ
- 60 (x16 only)
Min
Max
6
1000
-
5
-
2.5
-
2.5
2.5
1.5
1
1
5
-
- 75
Min
7.5
10
3
3
2.5
2.5
1.5
0.8
1
Notes : _{1. Parameters depend on programmed CAS latency.}
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Max
1000
5.4
6
5.4
6
Unit
Note
ns
1
ns
1,2
ns
2
ns
3
ns
3
ns
3
ns
3
ns
2
ns
DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
Parameter
Output rise time
Output fall time
Output rise time
Output fall time
Symbol
Condition
Min
Typ
Max
trh
Measure in linear
region : 1.2V ~ 1.8V
1.37
4.37
tfh
Measure in linear
region : 1.2V ~ 1.8V
1.30
3.8
trh
Measure in linear
region : 1.2V ~ 1.8V
2.8
3.9
5.6
tfh
Measure in linear
region : 1.2V ~ 1.8V
2.0
2.9
5.0
Notes : _{1. Rise time specification based on 0pF + 50 Ω to VSS, use these values to design to.}
2. Fall time specification based on 0pF + 50 Ω to VDD, use these values to design to.
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to VSS.
Unit
Volts/ns
Volts/ns
Volts/ns
Volts/ns
Notes
3
3
1,2
1,2
Rev. 1.2 August 2004