KFM1G16Q2M Datasheet, PDF (101/124 Pages) Samsung semiconductor – MuxOneNAND FLASH MEMORY

MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
5.0 AC CHARACTERISTICS
5.1 AC Test Conditions
Parameter
Input Pulse Levels
Input Rise and Fall Times
CLK
other inputs
Input and Output Timing Levels
Output Load
FLASH MEMORY
Value
0V to VCC
3ns
5ns
VCC/2
CL = 30pF
VCC
0V
VCC/2
Input & Output
Test Point
VCC/2
Input Pulse and Test Point
Device
Under
Test
* CL = 30pF including scope
and Jig capacitance
Output Load
5.2 Device Capacitance
CAPACITANCE(TA = 25 °C, VCC = 1.8V, f = 1.0MHz)
Item
Input Capacitance
Control Pin Capacitance
Output Capacitance
INT Capacitance
Symbol
CIN1
CIN2
COUT
CINT
Test Condition
VIN=0V
VIN=0V
VOUT=0V
VOUT=0V
Single
Min
Max
-
10
-
10
-
10
-
15
DDP
Min
Max
-
20
-
20
-
20
-
30
Unit
pF
pF
pF
pF
NOTE : Capacitance is periodically sampled and not 100% tested.
5.3 Valid Block Characteristics
Parameter
Valid Block Number
Single
DDP
Symbol
NVB
Min
1004
2008
Typ.
-
-
Max
1024
2048
Unit
Blocks
Blocks
NOTES:
1. The device may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is pre-
sented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or program
factory-marked bad blocks.
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block.
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