MR16R1622DF0 Datasheet, PDF (10/16 Pages) Samsung semiconductor – Key Timing Parameters

MR16R1622(4/8/G)DF0
MR18R1622(4/8/G)DF0
AC Electrical Specifications for RIMM Modules
Table 10: AC Electrical Specifications for RIMM Modules
RIMM Module Capacity
512/576MB 256/288MB 128/144MB 64/72MB
Symbol
Number of 256/288Mb RDRAM devices
Parameter and Condition for RIMM
Modules
Freq.
16
Max
8
Max
4
Max
2
Unit
Max
-1066
2.11
1.56
1.56
1.56
T_PD
Propagation Delay, all RSL signals
ns
-800
2.11
1.56
1.56
1.56
V_α/V_IN
Attenuation Limit
-1066
27.0
17.0
17.0
17.0
%
-800
25.0
16.0
16.0
16.0
Forward crosstalk coefficient
-1066
8.0
V_XF/V_IN
(300ps input rise time @ 20%-80%) _-800
8.0
4.0
4.0
4.0
4.0
4.0
%
4.0
Backward crosstalk coefficient
-1066
2.5
2.0
2.0
2.0
V_XB/V_IN
(300ps input rise time @ 20%-80%) _-800
2.5
2.0
2.0
%
2.0
R_DC
DC Resistance Limit
-1066
1.2
0.8
0.6
0.6
Ω
-800
1.2
0.8
0.6
0.6
Page 9
Version 1.0 July 2002