M464S0924FTS Datasheet, PDF (10/15 Pages) Samsung semiconductor – 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC

64MB, 128MB Unbuffered SODIMM
DC CHARACTERISTICS
M464S1724FTS (16M x 64, 128MB Module)
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Symbol
Test Condition
Operating current
(One bank active)
Precharge standby current
in power-down mode
Precharge standby current
in non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
ICC1
ICC2P
ICC2PS
ICC2N
ICC2NS
ICC3P
ICC3PS
ICC3N
ICC3NS
ICC4
ICC5
ICC6
Burst length = 1
tRC ≥ tRC(min)
IO = 0 mA
CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC =∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC =∞
Input signals are stable
CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC =∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC =∞
Input signals are stable
IO = 0 mA
Page burst
4Banks activated
tCCD = 2CLKs
tRC ≥ tRC(min)
C
CKE ≤ 0.2V
L
Notes : 1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ)
Version
7A
520
16
16
160
80
40
40
240
200
680
920
16
6.4
SDRAM
Unit
Note
mA
1
mA
mA
mA
mA
mA
mA
1
mA
2
mA
mA
Rev. 1.4 May 2004