K4X1G163PC-L Datasheet, PDF (10/20 Pages) Samsung semiconductor – Mobile DDR SDRAM

K4X1G163PC - L(F)E/G
Mobile DDR SDRAM
10. Absolute maximum ratings
Parameter
Voltage on any pin relative to V_SS
Voltage on V_DD supply relative to V_SS
Voltage on V_DDQ supply relative to V_SS
Storage temperature
Power dissipation
Short circuit current
Symbol
V_IN, V_OUT
V_DD
V_DDQ
T_STG
P_D
I_OS
Value
-0.5 ~ 2.7
-0.5 ~ 2.7
-0.5 ~ 2.7
-55 ~ +150
1.0
50
NOTE :
1) Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
2) Functional operation should be restricted to recommend operation condition.
3) Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Unit
V
V
V
°C
W
mA
11. DC Operating Conditions
Recommended operating conditions(Voltage referenced to VSS=0V, Tc = -25°C to 85°C)
Parameter
Symbol
Min
Max
Unit
Supply voltage(for device with a nominal VDD of 1.8V)
VDD
1.7
1.95
V
I/O Supply voltage
VDDQ
1.7
1.95
V
Input logic high voltage
VIH(DC)
0.7 x VDDQ VDDQ+0.3
V
Input logic low voltage
VIL(DC)
-0.3
0.3 x VDDQ
V
Output logic high voltage
VOH(DC)
0.9 x VDDQ
-
V
Output logic low voltage
VOL(DC)
-
0.1 x VDDQ
V
Input leakage current
Output leakage current
II
-2
IOZ
-5
2
uA
5
uA
NOTE :
1) Under all conditions, VDDQ must be less than or equal to VDD.
2) These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in simulation.
Note
1
1
2
2
IOH = -0.1mA
IOL = 0.1mA
- 13 -
November 2007