K4S563233F Datasheet, PDF (10/12 Pages) Samsung semiconductor – 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4S563233F - F(H)E/N/G/C/L/F
Mobile-SDRAM
A. MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with Normal MRS
Address
BA0 ~ BA1
A11 ~ A10/AP _A9^*2 A8 A7 A6 A5 A4 A3 A2 A1 A0
Function
"0" Setting for
Normal MRS
RFU^*1
W.B.L Test Mode
CAS Latency
BT
Burst Length
Normal MRS Mode
Test Mode
CAS Latency
Burst Type
Burst Length
A8 A7
Type
A6 A5 A4 Latency A3
Type
A2 A1 A0 BT=0
BT=1
0 0 Mode Register Set 0 0 0 Reserved 0
Sequential
000
1
1
01
Reserved
001
1
1
Interleave
001
2
2
10
Reserved
010
2
Mode Select
010
4
4
11
Reserved
011
3
BA1 BA0 Mode 0 1 1
8
8
Write Burst Length
A9
Length
0
Burst
1 0 0 Reserved
1 0 0 Reserved Reserved
1 0 1 Reserved
Setting _{1 0 1 Reserved Reserved}
0 0 for Nor-
1 1 0 Reserved
mal MRS ^{1 1 0 Reserved Reserved}
1
Single Bit
1 1 1 Reserved
1 1 1 _{Full Page}^*3 Reserved
Register Programmed with Extended MRS
Address BA1 BA0 A11 ~ A10/AP A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
Function Mode Select
RFU^*1
RFU^*1
PASR
EMRS for PASR(Partial Array Self Ref.)
BA1 BA0
00
01
10
11
A11~A10/AP
0
Mode Select
PASR
Mode
A2 A1 A0 Size of Refreshed Array
Normal MRS
0
0
0
Full Array
Reserved
0
0
1
1/2 of Full Array
EMRS for Mobile SDRAM
0
1
0
1/4 of Full Array
Reserved
0
1
1
Reserved
Reserved Address
1
0
0
Reserved
A9 A8 A7 A6 A5 A4 A3 1
0
1
Reserved
1
1
0
0000
0
0
0
1
1
1
Reserved
Reserved
NOTES:
1. RFU(Reserved for future use) should stay "0" during MRS cycle.
2. If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.
3. Full Page Length : x32 : 64Mb(256) , 128Mb (256), 256Mb (512), 512Mb (512)
10
May 2004