K4S56163LF Datasheet, PDF (10/12 Pages) Samsung semiconductor – 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

K4S56163LF - X(Z)E/N/G/C/L/F
Mobile-SDRAM
A. MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with Normal MRS
Address
BA0 ~ BA1
A12 ~ A10/AP _A9^*2 A8 A7 A6 A5 A4 A3 A2 A1 A0
Function
"0" Setting for
Normal MRS
RFU^*1
W.B.L Test Mode
CAS Latency
BT
Burst Length
Normal MRS Mode
Test Mode
CAS Latency
Burst Type
Burst Length
A8 A7
Type
A6 A5 A4 Latency A3
Type
A2 A1 A0 BT=0
BT=1
0 0 Mode Register Set 0 0 0 Reserved 0
Sequential
000
1
1
01
Reserved
001
1
1
Interleave
001
2
2
10
Reserved
010
2
Mode Select
010
4
4
11
Reserved
011
3
BA1 BA0 Mode 0 1 1
8
8
Write Burst Length
A9
Length
0
Burst
1
Single Bit
1 0 0 Reserved
1 0 0 Reserved Reserved
1 0 1 Reserved
Setting _{1 0 1 Reserved Reserved}
0 0 for Nor-
1 1 0 Reserved
mal MRS ^{1 1 0 Reserved Reserved}
1 1 1 Reserved
1 1 1 Full Page Reserved
Full Page Length x16 : 256Mb(512)
Register Programmed with Extended MRS
Address BA1 BA0 A12 ~ A10/AP A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
Function Mode Select
RFU^*1
DS
RFU^*1
PASR
EMRS for PASR(Partial Array Self Ref.) & DS(Driver Strength)
Mode Select
Driver Strength
BA1 BA0
Mode
A6 A5 Driver Strength A2 A1 A0
0
0
Normal MRS
00
Full
000
0
1
Reserved
01
1/2
001
1
0
EMRS for Mobile SDRAM 1 0
Reserved
010
1
1
Reserved
11
Reserved
011
Reserved Address
100
A12~A10/AP
A9
A8
A7
A4
A3
101
110
0
0
0
0
0
0
111
PASR
Size of Refreshed Array
Full Array
1/2 of Full Array
1/4 of Full Array
Reserved
Reserved
Reserved
Reserved
Reserved
NOTES:
1.RFU(Reserved for future use) should stay "0" during MRS cycle.
2.If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.
February 2004